bwin必赢国际

CN EN
Home
About Us
Newpros
650V Super Junction N-Channel MOSFET
650V Super Junction N-Channel MOSFET Back
 PDF

Introduction 1. The 650V series superjunction products designed by the special multi-layer epitepity process of Yangjie Technology can meet the application requirements of low conduction loss, low switching loss, EMI compatibility and different circuit topologies. The products have good performance of internal conduction resistance (Rdson) and gate charge (Qg), reduce conduction loss and switching loss. Lower switching noise and lower Trr improve system stability and performance.
2. Switch speed and EMI balance, lower Trr characteristics, suitable for charger, power adapter, TV power supply, industrial power supply and other fields, can also meet some half-bridge or various bridge circuit topology application requirements.
Features 1. Adopt the special multi-layer epitaxial process design of Yangjie Technology, with higher process stability and reliability, switching speed and EMI balance, lower Trr characteristics;
2. The series of products have the characteristics of low on-resistance, low gate charge, low on-loss and low switching loss;
3. To-252 /ITO-220AB package, with better calorific value characteristics.
SPECIFICATION
Related new products

YBS2G Gulling Patch Rectifier Bridge

120V SGT process N-channel MOSFET

MOSFET for High Power DC-DC

IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application

IGBT high frequency series C1 module

New N100V MOSFET for PD Power Supply

IGBT Discrete For PTC of Auto Industry

P60V MOSFET for Automotive Electronics

TO-247AC Package FRED for Charging Piles and Household Appliances, etc
网站地图